Researchers at the University of Hong Kong (HKU) have developed the world’s first ultra-wide bandgap semiconductor power module capable of operating at the megawatt level. The breakthrough could support high-power applications in electricity grids, medical equipment and advanced energy systems.
The research team developed a multi-chip module using gallium oxide, a semiconductor material capable of withstanding extremely high electric fields. The module repeatedly switched 1,000 volts and 1,000 amperes at a frequency of 1 kilohertz, reaching a peak power of one megawatt.
The achievement represents more than a hundred-fold increase over previous demonstrations using similar materials. The findings were published in Nature Communications and announced by HKU on November 9.
The research was led by Professor Yuhao Zhang, alongside Dr Hehe Gong and doctoral researcher Xin Yang. The team collaborated with researchers from Virginia Tech and Nanjing University.
Gallium oxide belongs to a class of materials known as ultra-wide bandgap semiconductors. These materials can operate under higher electric fields than conventional silicon-based semiconductors. However, gallium oxide has limited thermal conductivity, making heat management a major challenge in high-power applications.
The researchers addressed this by designing the semiconductor device and its packaging as one integrated system. They developed a junction-side cooling architecture to bring the heat-generating region closer to the cooling pathway. A high-permittivity insulating layer was also introduced to redistribute the electric field.
The module remained functional at temperatures exceeding 250 degrees Celsius.
Potential applications include high-voltage protection for power grids, particle accelerators, advanced medical systems and fusion energy facilities. The researchers said the design offers a scalable approach to developing high-power semiconductor systems.
